RF Power LDMOS Transistor Part #: MRFE6VP61K25HR6
- Brand: NXP Semiconductors
- Part #: MRFE6VP61K25HR6
- Alt. Part #: MRFE6VP61K25HR6
- Specs:-
- :: Rad Hardened: No
- :: Frequency (Max): 230(MHz)
- :: Frequency (Min): 1.8(MHz)
- :: Mounting: Screw
- :: Channel Mode: Enhancement
- :: Channel Type: N
- :: Package Type: Case 375D-05
- :: Drain Source Voltage (Max): 133(V)
- :: Drain Efficiency (Typ): 74(%)
- :: Reverse Capacitance (Typ): 2.8@50V(pF)
- :: Screening Level: Military
- :: Operating Temp Range: -55C to 225C
- :: Element #: 2
- :: Output Capacitance (Typ)@Vds: 185@50V(pF)
- :: Input Capacitance (Typ)@Vds: 562@50V(pF)
- :: Power Gain (Typ)@Vds: 24(dB)
- :: Mode Of Operation: CW/Pulsed RF
- :: Pin #: 5
- :: Condition: New
- :: Compatibility: Enterprise Systems*
- :: MPN: MRFE6VP61K25HR6
- Warranty: 1 (one) year Tekmart Warranty
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Key points to note on MRFE6VP61K25HR6 RF Power LDMOS Transistors:-
These high-ruggedness devices are designed for use in demanding environments such as industrial, broadcast (analog and digital), aerospace, and radio/land mobile applications. They offer exceptional performance with unmatched input and output designs, enabling a wide frequency range utilization between 1.8 and 600 MHz. These devices are suitable for use with both single-ended and push-pull configurations, making them versatile for a variety of setups.
The devices are qualified for operation with a maximum of 50 VDD and are characterized from 30 V to 50 V, providing an extended power range. They are suitable for linear applications when appropriately biased. With integrated ESD protection and a greater negative gate-source voltage range, they ensure improved Class C operation. These devices are also characterized with series equivalent large-signal impedance parameters for better performance. For convenience, they are available in tape and reel packaging, with the R6 suffix offering 150 units on a 56 mm tape with a 13in reel, and the R5 suffix offering 50 units with the same tape width and reel size.
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